Semiconductor Device with Multiple Polarity Groups

ABSTRACT

A semiconductor device includes passive electrical components in a substrate; and an interconnect structure over the passive electrical components, conductive features of the interconnect structure being electrically coupled to the passive electrical components. The conductive features of the interconnect structure includes a first conductive line over the substrate; a conductive bump over the first conductive line, where in a plan view, the conductive bumps has a first elongated shape and is entirely disposed within boundaries of the first conductive line; and a first via between the first conductive line and the conductive bump, the first via electrically connected to the first conductive line and the conductive bump, where in the plan view, the first via has a second elongated shape and is entirely disposed within boundaries of the conductive bump.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a divisional of U.S. patent application Ser. No.16/215,325, filed on Dec. 10, 2018 and entitled “Semiconductor Devicewith Multiple Polarity Groups,” which claims priority to U.S.Provisional Application No. 62/738,618, filed on Sep. 28, 2018 andentitled “Semiconductor Device with Multiple Polarity Groups,” and isrelated to the following co-pending and commonly assigned U.S. patentapplication Ser. No. 16/215,373, filed on Dec. 10, 2018 and entitled“Semiconductor Devices and Methods of Forming the Same,” whichapplications are hereby incorporated by references in their entireties.

BACKGROUND

The semiconductor industry has experienced rapid growth due tocontinuous improvements in the integration density of a variety ofelectronic components (e.g., transistors, diodes, resistors, capacitors,etc.). For the most part, this improvement in integration density hascome from repeated reductions in minimum feature size, which allows morecomponents to be integrated into a given area. As the demand for evensmaller electronic devices has grown recently, there has grown a needfor smaller and more creative packaging techniques of semiconductordies.

An example of these packaging technologies is the integrated fan-out(InFO) package technology. In an InFO package, a die is embedded in amolding material. A redistribution structure is formed on a first sideof the die and is electrically coupled to the die. The redistributionstructure extends beyond lateral extents of the die. Electricallyconductive features of the redistribution structure, such as conductivelines or conductive pads, allow electrically connection to the die atlocations beyond the boundaries of the die.

Integrated passive devices (IPDs) and technologies are gainingpopularity recently. A wide variety of passive devices, such ascapacitors, resistors, inductors, baluns, couplers, splitters, filters,or diplexers can be integrated in an IPD. Due to the high level ofintegration, IDPs may achieve significant reduction in footprintcompared with, e.g., surface mount devices (SMDs). At the same time,IPDs may provide significant cost reductions and performanceimprovements over SMDs.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1D illustrates various views of a portion of a semiconductordevice, in accordance with an embodiment.

FIG. 2A illustrates a plan view of a semiconductor device, in anembodiment.

FIG. 2B illustrates a zoomed-in view of a portion of the semiconductordevice of FIG. 2A.

FIG. 3A illustrates multiple current paths of a semiconductor device, inaccordance some embodiments.

FIG. 3B illustrates a schematic view of six inductors connected inparallel.

FIG. 4 illustrates a plan view of a semiconductor device, in accordancewith an embodiment.

FIG. 5 illustrates a cross-sectional view of a semiconductor package, inaccordance with some embodiments.

FIG. 6 illustrates a flow chart of a method for forming a semiconductordevice, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly. Throughout thedescription herein, unless otherwise stated, like reference numbersrefer to like elements.

In an embodiment, an integrated passive device (IPD) includes passiveelectrical components (e.g., capacitors) formed in a substrate of theIPD, and an interconnect structure over and electrically coupled to thepassive electrical components. The interconnect structure comprisesconductive lines, vias, and conductive bumps. In some embodiments, theconductive bumps of the IPD includes three or more polarity groups,where each polarity group includes conductive bumps configured to becoupled to a same polarity (e.g., a supply voltage such as +5V, or areference voltage such as the electrical ground) of a power supply. Byhaving three or more polarity groups, the equivalent series inductance(ESL) of the IPD is reduced. In some embodiments, vias in a topmost vialayer of the interconnect structure are connected to the conductivebumps, and an area (e.g., cross-section area) of the vias is betweenabout 50% and about 90% of an area (e.g., cross-section area) of theconductive bumps. By having large vias in the topmost via layer, theequivalent series resistance (ESR) of the IPD is reduced.

FIGS. 1A-1D illustrate various views (e.g., cross-section view and planview) of a portion of a semiconductor device 100, in accordance withsome embodiments. In particular, FIG. 1A illustrates a cross-sectionalview of the semiconductor device 100 along cross-section B-B in FIG. 1B,and FIG. 1B illustrates a plan view of the semiconductor device 100along cross-section A-A in FIG. 1A. FIG. 1C illustrates a plan view ofthe semiconductor device 100 along cross-section C-C in FIG. 1A, in anembodiment. FIG. 1D illustrates a plan view of the semiconductor device100 along cross-section C-C in FIG. 1A, in another embodiment. Note thatsince FIGS. 1A-1D illustrate a portion of the semiconductor device 100,the semiconductor device 100 may have additional elements (e.g., 103,121) disposed in areas beyond the illustrated portion.

The semiconductor device 100 may be an integrated passive device (IPD)with an array of electrical components 103, such as capacitors,integrated in the semiconductor device 100. Therefore, the semiconductordevice 100 may also be referred to as an IPD. The discussion hereinafteruses capacitors as examples of the passive electrical components (e.g.,103) integrated in the semiconductor device 100. The principle of thepresent disclosure may also be applied to IPDs with other types ofpassive electrical components, such as resistors, inductors, and thelike.

As illustrated in FIG. 1A, the semiconductor device 100 includeselectrical components 103 formed in/on a substrate 101. An interconnectstructure 110, which includes electrically conductive features such asconductive lines (e.g., 107, 115) and vias (e.g., 111, 119) formed in aplurality of dielectric layers (e.g., 105, 109, 113, and 117), is formedover the electrical components 103 and over the substrate 101. Theinterconnect structure 110 also includes conductive bumps 121 (e.g.,121P/121G). The interconnect structure 110 is electrically coupled tothe electrical components 103. As illustrated in FIG. 1A, the conductivebumps 121 (e.g., 121P, 121G) are formed over and electrically coupled toa topmost layer of vias 119 of the interconnect structure 110. Solderregions 123, which may be optional, are formed over the conductive bumps121.

The substrate 101 may be formed of a semiconductor material such assilicon, doped or undoped, or an active layer of asemiconductor-on-insulator (SOI) substrate. The substrate 101 mayinclude other semiconductor materials, such as germanium; a compoundsemiconductor including silicon carbide, gallium arsenic, galliumphosphide, gallium nitride, indium phosphide, indium arsenide, and/orindium antimonide; an alloy semiconductor including SiGe, GaAsP, AlInAs,AlGaAs, GalnAs, GaInP, and/or GaInAsP; or combinations thereof. Othersubstrates, such as multi-layered or gradient substrates, may also beused.

In FIG. 1A, electrical components 103, such as passive electricalcomponents, are formed in or on the substrate 101 using suitablefabrication techniques. In the illustrated embodiments, the electricalcomponents 103 are capacitors, and each of the capacitors has twocontact pads 102 (e.g., 102G, 102P) serving as the two terminals of thecapacitor. Each of the electrical components 103 may comprise asubstrate and one or more dielectric layers over the substrate. Thecontact pads 102 represent contacts for electrical connection to theelectrical component 103. The contact pad 102 may comprise aluminum, butother materials, such as copper, may alternatively be used. The contactpads 102 of each electrical component 103 (e.g., capacitors) areconfigured to be electrically coupled to two different polarities of apower supply. For example, the contact pads 102P may be configured to becoupled to a supply voltage, such as +5V or +3V, and the contact pad102G may be configured to be coupled to a reference voltage, such as theelectrical ground. Throughout the discussion herein, the letter “P”after a numeral (e.g., 102P) is used to indicate that a conductivefeatures (e.g., 102P) is configured to be coupled to a supply voltage(e.g., +5V, +3V), and the letter “G” after a numeral (e.g., 102G) isused to indicate that a conductive feature (e.g., 102G) is configured tobe coupled to a reference voltage (e.g., the electrical ground).

In the example of FIG. 1A, the interconnect structure 110 includes aplurality of metallization layers, such as layers of conductive lines(e.g., 107, 115) and layers of vias (e.g., 111, 119), formed in theplurality of dielectric layers (e.g., 105, 109, 113, and 117). Theinterconnect structure also includes the conductive bumps 121 (e.g.,121P/121G). In FIG. 1A, the interconnect structure 110 includesalternating layers of conductive lines and vias, with the bottommostmetallization layer being a layer of conductive lines 107. In someembodiments, the conductive bumps 121 and the vias 119 are formed in asame processing step, in which case the topmost metallization layer ofthe interconnect structure 110 may include the conductive bumps 121 andthe vias 119. Throughout the discussion herein, the vias 119 may bereferred to as the topmost layer of vias of the interconnect structure110. The structure of the interconnect structure 110 (e.g., number andlocation of the metallization layers in the interconnect structure 110)shown in FIG. 1A is merely an example and not limiting. Other structuresare also possible and are fully intended to be included within the scopeof the present disclosure.

Still referring to FIG. 1A, the dielectric layers 105, 109, 113, and 117of the interconnect structure 110 may be formed of a polymer such aspolybenzoxazole (PBO), polyimide, benzocyclobutene (BCB), or the like; anitride such as silicon nitride or the like; an oxide such as siliconoxide, phosphosilicate glass (PSG), borosilicate glass (BSG),boron-doped phosphosilicate glass (BPSG), or the like; or a combinationthereof, and may be formed, for example, by spin coating, lamination,chemical vapor deposition (CVD), or the like. The conductive features ofthe interconnect structure, such as the conductive lines 107/115 and thevias 111/119, may be formed through any suitable process, such asdeposition, damascene, dual damascene, or the like.

FIG. 1B illustrates a plan view of a portion of the semiconductor device100 of FIG. 1A along the cross-section A-A, in an embodiment. Asillustrated in FIG. 1B, an array of electrical components 103 are formedin/on the substrate 101, and each of the electrical components 103 has acontact pad 102P and a contact pad 102G. FIG. 1B further illustrates theconductive lines 107 in the bottommost layer of the interconnectstructure 110, which is not in the cross-section A-A and is illustratedin phantom. As illustrated in FIG. 1B, each of the contact pads 102 iselectrically coupled to a conductive line 107, and the contact pad 102G(e.g., connecting to the electrical ground) of two neighboringelectrical components 103 are coupled together by a conductive line 107.The shape and the size of the array of electrical components 103, aswell as the electrical connections illustrated in FIG. 1B are merelynon-limiting examples. Other shapes, sizes, and electrical connectionsare also possible and are fully intended to be included within the scopeof the present disclosure. For example, the electrical components 103 ofthe semiconductor device 100 may be formed in a row (e.g., aligned alonga line), as illustrated in FIG. 1D.

Referring back to FIG. 1A, the conductive bumps 121 (e.g., 121P, 121G)are formed over and electrically coupled to the vias 119 of theinterconnect structure 110. The conductive bumps 121 serve as theunder-bump metallurgy (UBM) structures of the semiconductor device 100,and therefore, may also be referred to as the UBM structures of thesemiconductor device 100. Any suitable method for forming the conductivebumps 121 may be used. The conductive bumps 121P and 121G are configuredto be coupled to two different polarities of a power supply. Forexample, the conductive bump 121P may be configured to be coupled to asupply voltage, e.g., +5V or +3V, and the conductive bump 121G may beconfigured to be coupled to a reference voltage, such as the electricalground.

In an exemplary embodiment, the conductive bumps 121 and the vias 119are formed in a same processing step. For example, after the dielectriclayer 117 is formed, a plurality of first openings are formed in thedielectric layer 117 to expose the underlying conductive lines 115. Thelocations of the first openings correspond to locations of the vias 119to be formed subsequently. Next, a seed layer is formed over thedielectric layer 117 and along the interior of the first opening in thedielectric layer 117. Next, a patterned mask layer (e.g., photoresist)is formed over the seed layer, and conductive material(s), such ascopper, is formed (e.g., by plating) in the openings of the patternedmask layer and over the seed layer. Next, the mask layer is removed, andportions of the seed layer on which the conductive material(s) is notformed is also removed.

In the illustrated embodiment, the interconnect structure 110 comprisesa plurality of electrically parallel conductive paths 143 (e.g., 143A,143B, 143C), each of which includes conductive features (e.g.,conductive lines and vias) electrically coupled between a conductivebump 121 and at least one contact pad 102 of the electrical component103. In the example of FIG. 1A, conductive lines (e.g., 115 and 107) andvias (e.g., 119 and 111) under the conductive bump 121G form a firstconductive path 143A between the conductive bump 121G and the contactpad 102G. In the example of FIG. 1A, the first conductive path 143A iscoupled to the contact pads 102G of the two adjacent electricalcomponents 103. Similarly, two additional conductive paths 143B and 143Care formed by conductive lines (e.g., 115 and 107) and vias (e.g., 119and 111) coupled between the conductive bumps 121P and the respectivecontact pads 102P.

In some embodiments, there is no electrically conductive feature (e.g.,conductive lines or vias) in the interconnect structure 110 connectingthe different conductive paths 143 of the interconnect structure 110. Inother words, the conductive paths 143 of the interconnect structures 110do not cross (e.g., do not physically intersect) with each other, thusthe conductive paths 143 are referred to as electrically parallelconductive paths. As a result, an electrical current (e.g., a positiveelectrical current, see current path 141A or 141B in FIG. 1A) flowing inthe semiconductor device 100, after leaving the conductive bumps 121P,can return to the conductive bump 121G only after traveling through theelectrical component 103. For example, referring to the current path141A in FIG. 1A, an electrical current travels from the conductive bump121P down, through the conductive path 143B toward the contact pad 102P,through the electrical component 103, travels upward from the contactpad 102G, through the conductive path 143A, and returns at theconductive bump 121G.

In the illustrated embodiment, the array of electrical components 103are capacitors connected in parallel. As will be discussed in moredetails hereinafter, the contact pads 102P are electrically coupled tothe supply voltage through the conductive bumps 121P, and the contactpads 102G are electrically coupled to the electrical grounds through theconductive bumps 121G. One skilled in the art will appreciate that theequivalent capacitance of N parallel connected capacitors, each having acapacitance of C, is N×C. Therefore, by parallel connecting theplurality of capacitors, the semiconductor device 100 is able to providea much larger equivalent capacitance (e.g., 0.001 μF to 100 μF) to anexternal circuit or an external device.

As the size of semiconductor device continues to shrink in advancedprocessing techniques and as the speed (e.g., clock speed) ofsemiconductor device continues to increase, parasitic characteristics ofthe semiconductor device may cause non-negligible impact on theperformance of the semiconductor device, and therefore, should be takeninto consideration during design and manufacturing of the semiconductordevice. For example, for an IPD with integrated capacitors, theequivalent series inductance (ESL) of the IPD device may limit (e.g.,lower) the operating frequency of the IPD, because when operating atfrequencies higher than the resonant frequency, the IPD may behave as aninductor instead of a capacitor, due to the ESL. In addition, theequivalent series resistance (ESR) of the IPD may lower efficiencies ofthe IPD by consuming power. Various embodiment designs disclosed hereinadvantageously reduces the ESL and ESR of the semiconductor devices,thus improving the performance of the semiconductor devices.

FIG. 1C illustrates a plan view of the semiconductor device 100 alongcross-section C-C in FIG. 1A, in an embodiment. For simplicity, not allfeatures of the semiconductor device 100 are illustrated in FIG. 1C. Inaddition, to illustrate the relative location of various features, somefeatures that are not in the cross-section C-C (e.g., 119, 115, 111, and107) are illustrated in phantom.

In FIG. 1C, each of the conductive bumps 121 (e.g., 121P, 121G) iselectrically coupled to a respective conductive line 115 through arespective via 119, and each of the conductive line 115 is electricallycoupled to a respective conductive line 107 through a respective via111. In FIG. 1C, each of the conductive lines 115 may include additionalsegments that are not illustrated. As will be discussed in more detailhereinafter with reference to FIGS. 2A, 2B, 3A, 3B and 4, the conductivebumps 121 form three or more polarity groups, which advantageouslyreduces the ESL of the semiconductor device 100. In addition, the shapeof the conductive bumps 121, and ratio between the area of the via 119and the area of the respective conductive bump 121, are designed toreduce the ESR of the semiconductor device.

FIG. 1D illustrates a plan view of the semiconductor device 100 alongcross-section C-C in FIG. 1A, in accordance with another embodiment. Forsimplicity, not all features of the semiconductor device 100 areillustrated in FIG. 1D. In addition, to illustrate the relative locationof various features, some features that are not in the cross-section C-C(e.g., 119, 115, 111, and 107) are illustrated in phantom.

In the example of FIG. 1D, the electrical components 103 are alignedalong a line. The conductive line 107 may electrically couple togethercontact pads 102G (or 102P) from two adjacent electrical components 103.As illustrated in FIG. 1D, each of the conductive bumps 121 (e.g., 121P,121G) is electrically coupled to a respective conductive line 115through a respective via 119, and each of the conductive line 115 iselectrically coupled to a respective conductive line 107 through arespective via 111. In FIG. 1D, each of the conductive lines 115 mayinclude additional segments that are not illustrated. As will bediscussed in more detail hereinafter, the conductive bumps 121 formthree or more polarity groups, which advantageously reduce the ESL ofthe semiconductor device 100. In addition, the shape of the conductivebumps 121, and ratio between the area of the via 119 and the area of therespective conductive bump 121, are designed to reduce the ESR of thesemiconductor device.

Variations to the example of FIGS. 1C and 1D are possible and are fullyintended to be included within the scope of the present disclosure. Forexample, in FIG. 1D, a first row of electrical components 103 areillustrated. There may be a second row of electrical components 103disposed in parallel with the first row of electrical components 103.The conductive lines 115 electrically coupled to respective electricalcomponents 103 in the second row may re-route the locations ofrespective vias 119 and locations of respective conductive bumps 121,such that all of the vias 119 and conductive bumps 121 may be disposedin a similar pattern as illustrated in FIG. 2A.

Discussion below with reference to FIGS. 2A, 2B and 4 are focused on thedesign of the conductive bumps 121 and certain features (e.g., vias 119,111) of the interconnect structure 110 of the semiconductor device(e.g., 100A in FIGS. 2A and 2B, 100B in FIG. 4). Therefore, theelectrical components 103 are omitted in FIGS. 2A, 2B and 4 to avoidclutter.

FIG. 2A illustrates a plan view of a semiconductor device 100A, in anembodiment. The plan view of the semiconductor device 100A in FIG. 2A issimilar to the plan view of the semiconductor device 100 in FIG. 1D, butwith different numbers of electrical components 103 and conductive bumps121, among other things. Note that for clarity, not all features of thesemiconductor device 100A are illustrated in FIG. 2A. In addition, toillustrate the relative positions of various features, some features(e.g., 119, 115, 111, and 103) that are not visible in the cross-sectionare also illustrated in FIG. 2A. FIG. 2B is a zoomed-in view showing aconductive bump 121 of FIG. 2A and certain conductive features (e.g.,119, 111) coupled to the conductive bump 121.

Referring now to FIG. 2A, FIG. 2A illustrates the conductive bumps 121(e.g., 121G, 121P) and some conductive features of the interconnectstructure 110 (see FIG. 1A) that are electrically coupled to theconductive bumps 121, such as vias 119, conductive lines 115, and vias111. Note that in the illustrative example of FIG. 1A, the interconnectstructure 110 has two via layers (e.g., 111, 119), two conductive linelayers (e.g., 107, 115), and a layer of the conductive bumps 121, wherethe vias 119 are the topmost via layer of the interconnect structure110, the conductive lines 115 are the topmost conductive line layer ofthe interconnect structure 110, and the vias 111 are the second topmostvia layer of the interconnect structure 110. For embodiments where theinterconnect structure 110 has more via layers and conductive linelayers than what is illustrated in FIG. 1A, the vias 119 should beinterpreted as the topmost via layer of the interconnect structure, theconductive lines 115 should be interpreted as the topmost conductiveline layer of the interconnect structure, and the vias 111 should beinterpreted as the second topmost via layer of the interconnectstructure, in some embodiments.

In FIG. 2A, each of the conductive bumps 121 is disposed over arespective conductive line 115. The conductive bumps 121 may be disposedwithin the boundaries (e.g., sidewalls) of the respective conductiveline 115. As illustrated in FIG. 2A, each of the conductive bumps 121has an elongated shape. The conductive bumps 121 are illustrated to havea racetrack oval shape in FIG. 2A. This is merely a non-limitingexample. Other suitable shapes, such as rectangle, oval, or the like,are also possible and are fully intended to be included within the scopeof the present disclosure. In some embodiments, each of the conductivebumps 121 has a length L₂ (see FIG. 2B) and a width W₂ (see FIG. 2B),and a ratio between the length L₂ and the width W₂ is larger than about3, such as between about 3 and about 100. The elongated shape of theconductive bump 121, together with the large ratio between the length L₂and the width W₂, increase the area of the conductive bump 121 and helpto reduce the ESR of the semiconductor device 100, as discussed in moredetails hereinafter.

FIG. 2A also illustrates the vias 119 of the interconnect structure 110.Each of the vias 119 is electrically coupled to a respective conductivebump 121. In the plan view of FIG. 2A (or FIG. 2B), each of the vias 119has an area that is between about 20% to about 95%, such as betweenabout 50% and about 90%, of an area of the conductive bump 121, in someembodiments. In some embodiments, the via 119 has a length L₁ (see FIG.2B) and a width W₁ (see FIG. 2B), where L₁ is between about 50% andabout 90% of L₂, and W₁ is between about 50% and about 90% of W₂. Forexample, in an embodiment design, the length L₂ is about 340 μm, thewidth W₂ is about 40 μm, the length L₁ is about 330 μm, and the width W₁is about 30 μm. The elongated shape of the conductive bump 121 increasesthe area of the conductive bump 121, and since the via 119 has an areathat is, e.g., 50% to 90% of the area of the conductive bump 121, thearea of the via 119 is also increased compared with conventionaldesigns. The large areas (e.g., cross-section areas) of the vias 119advantageously reduce the ESR of the semiconductor device (e.g., 100,100A, 100B) formed, thereby improving the efficiency (e.g., reducespower consumption) of the semiconductor device.

While a large area (e.g., larger than about 50% of the area of theconductive bump 121) of the via 119 helps to reduce the ESR, the area ofthe via 119 may not match (e.g., be 100% of) that of the conductive bump121. The fabrication process may limit how close the area of the via 119matches the area of the conductive bump 121, e.g., due to the errormargin in the photolithography process used to form the opening for theconductive bump 121. If the area of the via 119 is close to 100% (e.g.,larger than 95%) of the area of the conductive bump 121, there may notbe enough error margin allowed for the photolithography process. Inother words, an error (e.g., misalignment) in the photolithographyprocess may result in defective conductive bumps 121 with poorelectrical connections to be formed. Therefore, the above recited range(e.g., 50% to 90% of the area of the conductive bump 121) for the areaof the vias 119 achieves good ESR reduction while preventing or reducingdefective conductive bumps 121 from being formed.

In the illustrated embodiment of FIGS. 2A and 2B, the via 119 has ashape that is geometrically similar to the shape of the conductive bump121. In other words, the shape of the via 119 may be a scaled (e.g.,shrunk) version of the shape of the conductive bump 121. However, thisis merely an example and not limiting. For example, the via 119 may havea shape that is different from the shape of the conductive bump 121, butstill have an area that is between, e.g., about 50% and about 90% of thearea of the conductive bump 121.

FIGS. 2A and 2B further illustrate the vias 111 coupled to respectivevias 119 through conductive lines 115 (e.g., 115G, 115P, see also FIG.1A). In the illustrated embodiment, the via 111 has an area that issmaller than the area of the via 119. For example, the area of the via111 may be between about 10% and about 90% of the area of the respectivevia 119. As illustrated in FIG. 2B, the via 111 has a length L₃ and awidth W₃, which are smaller than the length L₁ and the width W₁ of thevia 119, respectively. In some embodiments, the length L₃ is betweenabout 0.1 μm and about 10 μm, and the width W₃ is between about 0.1 μmand about 10 μm.

In some embodiments, the ESR of the semiconductor device 100 is reducedby increasing the areas (e.g., cross-section areas) of the topmost layerof vias (e.g., 119), but the areas (e.g., cross-section areas) of thelower layers of vias (e.g., 111) do not significantly affect the ESR.Therefore, the area of the vias 111 (and other lower layer of vias, ifany) may be formed to be smaller than the area of the vias 119, whichmeans that the vias 111 may be formed with a shorter processing time andless material (e.g., copper) than the via 119. Therefore, by forming thevias 119 to be larger (e.g., larger cross-section areas) than the vias111, a good balance between lower ESR and lower processing time/materialcost is achieved in the production of the semiconductor device.

In the example of FIGS. 2A and 2B, the via 111 has a different shapethan the via 119. For example, the via 111 has a circular shape, and thevia 119 has a racetrack oval shape. In other embodiments, the via 111and the via 119 have similar shapes (e.g., geometrically similarshapes). In addition, although the via 111 is illustrated to have acircular shape, the via 111 may have other suitable shapes, such assquare, rectangular, octagon, or the like.

Referring to FIG. 2A, the conductive bumps 121 are grouped into aplurality of polarity groups PolG (e.g., PolG_P, PolG_G), where eachpolarity group includes one or more conductive bumps 121 configured tobe coupled to a same polarity of the power supply. For example, thepolarity group PolG_P includes one or more conductive bumps 121P thatare configured to be coupled to the voltage supply (e.g., +5V, +3V), andthe polarity group PolG_G includes one or more conductive bumps 121Gthat are configured to be coupled to the reference voltage (e.g.,electrical ground). The one or more conductive bumps 121 in a samepolarity groups (e.g., PolG_P, or PolG_G) are disposed in a rectangularregion along the upper surface of the semiconductor device 100A, in someembodiments. In FIG. 2A, two of the rectangular regions are illustratedby the dashed rectangular around the conductive bumps 121 and pointed toby the labels PolG_P and PolG_G. Other five rectangular regions, eacharound a respective conductive bump 121, are not labeled to avoidclutter.

In the illustrated embodiment, all of the conductive bumps 121 of apolarity group are configured to be coupled to the same polarity of thepower supply. In other words, a polarity group should not includeconductive bumps configured to be coupled to different polarities of thepower supply. Polarity groups that are immediately adjacent to eachother are configured to be coupled to different polarities of the powersupply, and there is no stand-alone conductive bump (e.g., a conductivebump not belonging to a polarity group) between two immediately adjacentpolarity groups, in some embodiments. A conductive bump 121 can onlybelong to a single polarity group, or stated in another way, noconductive bump 121 belongs to two different polarity groups. Therefore,there is no shared (e.g., common) conductive bump between differentpolarity groups, in some embodiments. In some embodiments, polaritygroups do not intersect with each other. In some embodiments, therectangular regions (e.g., see PolG_P and PolG_G in FIG. 2A) of twoimmediately adjacent polarity groups do not overlap.

In the example of FIG. 2A, there are seven polarity groups (only twopolarity groups are labeled to avoid clutter) for the conductive bumps121, where each polarity group includes one conductive bumps 121. Inparticular, there are three polarity groups PolG_P, each bordered by arectangular region around a respective conductive bump 121P, and thereare four polarity groups PolG_G, each bordered by a rectangular regionaround a respective conductive bump 121G. The number of polarity groups,and the number of conductive bumps in each polarity group as illustratedin FIG. 2A is merely an example and non-limiting. There may be more thanone conductive bumps in a polarity group (see FIG. 4), and the number ofpolarity groups for the conductive bumps 121 may be three, four, ormore. By having three or more polarity groups for the conductive bumps121, ESL of the semiconductor device 100 is advantageously reduced, asdiscussed in details hereinafter.

Still referring to FIG. 2A, the conductive bumps 121G are aligned witheach other, and the conductive bumps 121P are aligned with each other.However, there is an offset D₁ between an end of a conductive bump 121Gand an end of a conductive bump 121P. In other words, the conductivebumps 121G are staggered with the conductive bumps 121P with an offsetD₁. In some embodiments, the offset D₁ is between about 5% and about50%, such as between about 10% and about 20%, of the length L₂ (see FIG.2B) of the conductive bump 121. The offset D₁ between the conductivebumps 121G and the conductive bumps 121P helps to reduce tilting (e.g.,being non-level) of the semiconductor device (e.g., 100, 100A or 100B)when the semiconductor device is attached to another device or package(see, e.g., FIG. 5). Referring temporarily to FIG. 5, when a reflowprocess is performed to melt solder regions 123 (see label in FIG. 1A)for attaching the conductive bumps 121 of the semiconductor device400/100/100A/100B to conductive features 149 (e.g., pads) of a bottompackage 200, the melted solder on all of the conductive bumps 121 mayflow unevenly to one side (e.g., all of the melted solder may flow tothe left ends, or the right ends of conductive bumps 121, see FIG. 2A),if the conductive bumps 121P and 121G are all aligned. Therefore, due tothe different amount of solder on different ends of the conductive bumps121, the semiconductor device (e.g., 400/100/100A/100B) may be tilted(e.g., not parallel with) with respect to the bottom package 200, thuscausing unreliable electrical connections between the two devices. Inthe current disclosure, by having the offset D₁ between the conductivebump 121G and the conductive bump 121P, the staggered distribution ofthe conductive bumps 121 reduces or prevents the possibility that themelted solder flow to a same ends of the conductive bumps 121, therebyreducing or preventing the tilting of the semiconductor device. In someembodiment, if the offset D₁ is smaller than about 5% of the length L₂,tilting of the semiconductor device may still happen; if the offset D₁is larger than about 50% of the length L₂, the reduction in ESL may benegatively impacted (e.g., reduced). A large offset D₁ (e.g., >50%) mayalso limit the size of the IPD device formed. Various structures andmethods for reducing or preventing the tilting of semiconductor deviceduring the bonding process are disclosed in U.S. patent application Ser.No. 16/215,373, which application is hereby incorporated by reference inits entirety.

FIG. 3A illustrates multiple current paths 141 of the semiconductordevice (e.g., 100A and 100B) having seven polarity groups, in accordancesome embodiments. Note that for simplicity, only the conductive bumps121P and 121G are illustrated in FIG. 3A. More details of the currentpaths 141 (e.g., 141A, 141B) are illustrated in FIG. 1A. As illustratedin FIG. 3A, there are a total of six parallel current paths 141 betweenconductive bumps 121P and respective neighbor conductive bumps 121G. Insome embodiments, there is a parasitic inductance between each pair ofconductive bumps 121P and 121G, and therefore, the semiconductor device100, by having seven polarity groups and six parallel current paths 141,has a parasitic inductance (e.g., ESL) that is equal to the equivalentinductance of six parallel connected parasitic inductors.

FIG. 3B illustrates a schematic view of six inductors 133 connected inparallel. One skilled in the art will appreciate that the equivalentinductance of a plurality of parallel connected inductors is smallerthan the inductance of each of the plurality of parallel connectedinductors. For example, assuming that each of the inductors 133 has asame inductance denoted as L, then the equivalent inductance of the sixparallel connected inductors 133 is L/6. Therefore, by having three ormore polarity groups for the conductive bumps 121 (therefore two or moreparallel current paths 141), the ESL of the semiconductor device 100 isreduced (e.g., by more than half) compared with a conventionaltwo-terminal design (e.g., comprising only two polarity groups) forconductive bumps.

FIG. 4 illustrates a plan view of another semiconductor device 100Bsimilar to the semiconductor device 100A of FIG. 2A, in accordance withan embodiment. There are seven polarity groups for the conductive bumps121 in FIG. 4, and only two are labeled to avoid clutter. The polaritygroups in FIG. 4 are similar to those in FIG. 2A, but with moreconductive bumps 121 in each polarity group. In particular, in FIG. 4,each polarity group (e.g., PolG_G, or PolG_P) of the conductive bumps121 includes two conductive bumps 121 (e.g., two conductive bumps 121G,or two conductive bumps 121P). In FIG. 4, each conductive bumps 121 iselectrically coupled to a respective via 119, a respective conductiveline 115, and a respective via 111. The discussion above regarding theshape and size of the conductive bumps 121 with respect to the vias 119,and the shape and size of the via 119 with respect to the via 111,applies to the embodiment of FIG. 4. For example, a ratio between alength and a width of each of the conductive bump 121 in FIG. 4 islarger than about 3, such as between about 3 and about 100. The area ofeach via 119 is between about 20% to about 95%, such as between about50% and about 90%, of the area of a respective conductive bump 121 towhich the via 119 is coupled, in some embodiments. The area of the via111 is smaller than the area of the via 119, and the via 111 may have adifferent shape from the via 119, in some embodiments. As illustrated inFIG. 4, there is an offset D₂ between an end of a conductive bump 121Gand an end of conductive bump 121G, where D₂ may be between about 10%and about 20% of the length of the conductive bump 121. In anembodiment, the length and the width of the conductive bump 121 in FIG.4 is about 140 μm and about 40 μm, respectively, and the length and thewidth of the via 119 in FIG. 4 is about 130 μm and about 30 μm,respectively.

Embodiments disclosed herein achieve significant performance improvementover designs without the disclosed features. Simulations were performedto study the ESL and ESR of the semiconductor device 100A of FIG. 2A,and the semiconductor device 100B of FIG. 4. For comparison, a referencetwo-terminal device having a power pad (e.g., configured to be connectedto a supply voltage such as +5V) and a ground pad (e.g., configured tobe connected to a reference voltage such as electrical ground) is alsosimulated. The simulation results show that compared with the referencetwo-terminal device, both the semiconductor devices 100A and 100Bachieve about 98% reduction in the ESL at 100 MHz frequency, and achieveabout 94% reduction in the ESR at 100 MHz frequency.

In addition, the ESL and ESR of a second reference device were alsosimulated for comparison. Conductive bumps of the second referencedevice has seven polarity groups, where each polarity group includes aplurality of circular shaped micro-bumps (e.g., having a 1:1 aspectratio), and each micro-bump is coupled to an underlying conductive line(e.g., in an interconnect structure) through a via that has a smallerarea (e.g., cross-section) than the micro-bump. The simulation resultsshow that compared with the second reference device, the semiconductordevices 100A and 100B achieve about 20% reduction and about 10%reduction, respectively, in the ESL at 100 MHz frequency, and achieveabout 33% reduction and about 23% reduction, respectively, in the ESR at100 MHz frequency.

FIG. 5 illustrates a cross-sectional view of a semiconductor package500, in accordance with some embodiments. The semiconductor package 500includes a bottom package 200, a top package 300, and a semiconductordevice 400 (e.g., an IPD) attached to the bottom package 200. Thesemiconductor device 400 may be the semiconductor device 100, 100A, or100B disclosed above.

In FIG. 5, the semiconductor device 400, which may be any of the abovedisclosed semiconductor devices (e.g., 100, 100A, or 100B), is attachedto the bottom package 200. The bottom package 200 has a die 220 betweena front side redistribution structure 240 and a backside redistributionstructure 210. Each of the front side redistribution structure 240 andthe backside redistribution structure 210 includes conductive features(e.g., conductive lines and vias) formed in one or more dielectriclayers. A molding material 230 is formed between the front sideredistribution structure 240 and the backside redistribution structure210. Conductive pillars 219, such as copper pillars, are formed in themolding material 230. The conductive pillars 219 electrically couple thefront side redistribution structure 240 with the backside redistributionstructure 210.

Still referring to FIG. 5, a top package 300 is bonded to the bottompackage 200 through conductive joints 268. As illustrated in FIG. 5, thetop package 300 has a substrate 261 and one or more semiconductor dies262 (e.g., memory dies) attached to an upper surface of the substrate261. In some embodiments, the substrate 261 includes silicon, galliumarsenide, silicon on insulator (“SOI”) or other similar materials. Insome embodiments, the substrate 261 is a multiple-layer circuit board.In some embodiments, the substrate 261 includes bismaleimide triazine(BT) resin, FR-4 (a composite material composed of woven fiberglasscloth with an epoxy resin binder that is flame resistant), ceramic,glass, plastic, tape, film, or other supporting materials. The substrate261 may include conductive features (e.g., conductive lines and vias)formed in/on the substrate 261. As illustrated in FIG. 5, the substrate261 has conductive pads 263 formed on an upper surface and a lowersurface of the substrate 261, which conductive pads 263 are electricallycoupled to the conductive features of the substrate 261. The one or moresemiconductor dies 262 are electrically coupled to the conductive pads263 by, e.g., bonding wires 267. A molding material 265, which maycomprise an epoxy, an organic polymer, a polymer, or the like, is formedover the substrate 261 and around the semiconductor dies 262. In someembodiments, the molding material 265 is conterminous with the substrate261, as illustrated in FIG. 5.

In some embodiments, a reflow process is performed to electrically andmechanically coupled the top package 300 to the backside redistributionstructure 210. Conductive joints 268 are formed between the conductivepads 263 and conductive features 214 of the backside redistributionstructure 210. In some embodiments, the conductive joints 268 comprisesolder regions, conductive pillars (e.g., copper pillars with solderregions on at least end surfaces of the copper pillars), or any othersuitable conductive joints. Similarly, a reflow process may be performedto bond the conductive bumps 121 of the semiconductor device 400 toconductive features 149 (e.g., conductive pads) of the bottom package200. In some embodiments, the shapes, the sizes, and the locations ofthe conductive features 149 match (e.g., are equal to) those of therespective conductive bumps 121. Solder regions 173 may be formedbetween the conductive features 149 and the conductive bumps 121. Insome embodiments, the conductive bumps 121P are bonded to conductivefeatures 149P, which conductive features 149P are electrically coupledto a supply voltage (e.g., +5V, +3V) of a power supply, e.g., throughexternal connectors 255 of the bottom package 200. Similarly, theconductive bumps 121G are bonded to conductive features 149G, whichconductive features 149G are electrically coupled to a reference voltage(e.g., electrical ground) of the power supply through, e.g., theexternal connectors 255.

Variations to the disclosed embodiments are possible and are fullyintended to be included within the scope of the present disclosure. Forexample, the number of polarity groups and the number of conductivebumps within a polarity group may be changed to other suitable numbers.The shape or the size of the conductive bumps 121, and the shape or thesize of the vias 119 may be modified to have other suitableshapes/values without departing from the spirit of the presentdisclosure. As another example, the passive device (e.g., capacitor)integrated in the semiconductor device may have two terminals that areinterchangeable (e.g., polarity may be switched), and therefore, theillustrations and discussions above regarding conductive features (e.g.,121P, or 121G) configured to be coupled to a specific polarity may beswitched (e.g., 121P/115P switched 121G/115G, 121G/115G switched to121P/115G) to form other embodiments of the present disclosure.

FIG. 6 illustrates a flow chart of a method for forming a semiconductordevice, in accordance with some embodiments. It should be understoodthat the embodiment method shown in FIG. 6 is merely an example of manypossible embodiment methods. One of ordinary skill in the art wouldrecognize many variations, alternatives, and modifications. For example,various steps as illustrated in FIG. 6 may be added, removed, replaced,rearranged and repeated.

Referring to FIG. 6, in block 1010, passive electrical components areformed in a substrate. In block 1020, first vias are formed over thesubstrate, the first vias having an elongated shape and beingelectrically coupled to the passive electrical components. In block1030, conductive bumps are formed over the first vias, the conductivebumps being electrically coupled to respective ones of the first vias,the conductive bumps having the elongated shape, wherein forming theconductive bumps comprises forming, in a first region, first conductivebumps configured to be coupled to a first polarity of a power supply;forming, in a second region adjacent to the first region, secondconductive bumps configured to be coupled to a second polarity of thepower supply; and forming, in a third region adjacent to the secondregion, third conductive bumps configured to be coupled to the firstpolarity of the power supply, wherein the second region is between thefirst region and the third region.

Embodiment may achieve advantages. By having three or more polaritygroups in the conductive bumps 121, ESL of the semiconductor deviceformed is reduced. By forming vias 119 having large cross-section areas(e.g., 50% to 90% of the area of the conductive bumps 121), ESR of thesemiconductor device formed is also reduced. The disclosed embodimentsimprove the performance of the semiconductor devices formed by allowingfor higher operating frequency and by lowering power consumption. Forforming the via 119 to be larger than the via 111, a good balancebetween lowering ESR and lower process time/cost is achieved.

In an embodiment, a semiconductor device includes passive electricalcomponents in a substrate; and an interconnect structure over thepassive electrical components, conductive features of the interconnectstructure being electrically coupled to the passive electricalcomponents. The conductive features of the interconnect structureincludes a first conductive line over the substrate; a conductive bumpover the first conductive line, where in a plan view, the conductivebumps has a first elongated shape and is entirely disposed withinboundaries of the first conductive line; and a first via between thefirst conductive line and the conductive bump, the first viaelectrically connected to the first conductive line and the conductivebump, where in the plan view, the first via has a second elongated shapeand is entirely disposed within boundaries of the conductive bump. In anembodiment, the interconnect structure includes a plurality ofconductive bumps, where the interconnect structure includes a pluralityof electrically conductive paths, where each of the electricallyconductive paths couples one of the conductive bumps to at least onecontact pad of one of the passive electrical components, where theinterconnect structure is free of a conductive feature that provideselectrical connection among the plurality of electrically conductivepaths. In an embodiment, the passive electrical components are of a sametype, where the passive electrical components are capacitors, resistors,or inductors. In an embodiment, in the plan view, the first via has anarea that is between about 50% and about 90% of an area of theconductive bump. In an embodiment, the interconnect structure includes asecond via between the first conductive line and the substrate, thesecond via electrically coupled to the first via, where in the planview, an area of the second via is smaller than an area of the firstvia. In an embodiment, the second elongated shape is geometricallysimilar to the first elongated shape.

In an embodiment, a semiconductor device includes a substrate;electrical components in the substrate; and metallization layers overand electrically coupled to the electrical components, where themetallization layers includes first vias and conductive bumps over thefirst vias, the conductive bumps electrically coupled to the first vias,where the first vias are in a topmost via layer of the metallizationlayers, where the conductive bumps includes a first group of bumpsconfigured to be coupled to a first polarity of a power supply; a secondgroup of bumps configured to be coupled to a second polarity of thepower supply; and a third group of bumps configured to be coupled to thefirst polarity of the power supply, where the second group of bumps isbetween the first group of bumps and the third group of bumps. In anembodiment, the first group of bumps are disposed in a first region, thesecond group of bumps are disposed in a second region, and the thirdgroup of bumps are disposed in a third region, where there is noconductive bump between the first region and the second region, wherethere is no conductive bump between the second region and the thirdregion. In an embodiment, the electrical components are capacitors,resistors, or inductors. In an embodiment, in a plan view, each of theconductive bumps has an elongated shape. In an embodiment, the elongatedshape has a length and a width, a ratio between the length and the widthbeing larger than about 3. In an embodiment, a first conductive bump ofthe conductive bumps is electrically connected to a first via of thefirst vias, where in a plan view, an area of the first via is betweenabout 50% and about 90% of an area of the first conductive bump. In anembodiment, in the plan view, the first via has a similar geometricshape as the first conductive bump. In an embodiment, the metallizationlayers include a plurality of conductive paths, where each of theconductive paths includes conductive lines and vias of the metallizationlayers that are coupled between a conductive bump and a contact pad ofan electrical component, where there is no conductive feature in themetallization layers connecting conductive paths that are coupled todifferent conductive bumps. In an embodiment, the metallization layersincludes a layer of second vias between the first vias and thesubstrate, where the second vias are electrically coupled to respectivefirst vias, where in a plan view, each of the first vias has an arealarger than an area of a respective one of the second vias. In anembodiment, each of the first vias has a shape different from a shape ofthe respective one of the second vias.

In an embodiment, a method includes forming passive electricalcomponents in a substrate; forming first vias over the substrate, thefirst vias having an elongated shape and being electrically coupled tothe passive electrical components; and forming conductive bumps over thefirst vias, the conductive bumps being electrically coupled torespective ones of the first vias, the conductive bumps having theelongated shape, where forming the conductive bumps includes forming, ina first region, first conductive bumps configured to be coupled to afirst polarity of a power supply; forming, in a second region adjacentto the first region, second conductive bumps configured to be coupled toa second polarity of the power supply; and forming, in a third regionadjacent to the second region, third conductive bumps configured to becoupled to the first polarity of the power supply, where the secondregion is between the first region and the third region. In anembodiment, in a top view, each of the first vias has a first area thatis between about 50% and about 90% of a second area of a respectiveconductive bump. In an embodiment, the method further includes formingsecond vias between the first vias and the substrate, where each of thesecond vias is electrically coupled to a respective first via, where inthe top view, each of the second vias has a third area smaller than thefirst area of the respective first via. In an embodiment, a shape of thefirst vias is different from a shape of the second vias.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device comprising: electricalcomponents in a substrate; and an interconnect structure over thesubstrate and electrically coupled to the electrical components, theinterconnect structure comprising: a first conductive line over thesubstrate; a conductive bump over the first conductive line, wherein ina plan view, the conductive bump has a first elongated shape; and afirst via between the first conductive line and the conductive bump, thefirst via electrically coupled to the first conductive line and theconductive bump, wherein in the plan view, the first via has a secondelongated shape, wherein the first elongated shape and the secondelongated shape are geometrically similar shapes.
 2. The semiconductordevice of claim 1, wherein in the plan view, the first via is disposedwithin boundaries of the conductive bump.
 3. The semiconductor device ofclaim 2, wherein in the plan view, the conductive bump is disposedwithin boundaries of the first conductive line.
 4. The semiconductordevice of claim 1, wherein an area of the second elongated shape isbetween about 50% and about 90% of an area of the first elongated shape.5. The semiconductor device of claim 1, wherein the first elongatedshape has a length and a width, wherein a ratio between the length andthe width is larger than about
 3. 6. The semiconductor device of claim1, wherein the electrical components are passive electrical componentsof a same type, wherein the passive electrical components arecapacitors, resistors, or inductors.
 7. The semiconductor device ofclaim 1, wherein the first via is in a topmost via layer of theinterconnect structure, wherein the first via physically contacts theconductive bump.
 8. The semiconductor device of claim 1, wherein theinterconnect structure further comprises a second via between the firstconductive line and the substrate, the second via electrically coupledto the first via, wherein in the plan view, the second via has a thirdshape, wherein an area of the third shape is smaller than an area of thesecond elongated shape.
 9. The semiconductor device of claim 8, whereinthe third shape and the second elongated shape are not geometricsimilar.
 10. The semiconductor device of claim 1, wherein theinterconnect structure comprises a plurality of conductive bumps, withthe conductive bump being one of the plurality of conductive bumps,wherein the interconnect structure comprises a plurality of electricallyconductive paths, wherein each of the electrically conductive pathscouples one of the plurality of conductive bumps to a contact pad of oneof the electrical components, wherein the interconnect structure is freeof a conductive feature that provides electrical connection among theplurality of electrically conductive paths.
 11. The semiconductor deviceof claim 1, wherein the interconnect structure comprises: a first groupof conductive bumps configured to be coupled to a first polarity of apower supply, wherein the conductive bump is one of the first group ofconductive bumps; a second group of conductive bumps configured to becoupled to a second polarity of the power supply; and a third group ofconductive bumps configured to be coupled to the first polarity of thepower supply, wherein the second group of conductive bumps is betweenthe first group of conductive bumps and the third group of conductivebumps.
 12. A semiconductor device comprising: electrical components in asubstrate; and metallization layers over and electrically coupled to theelectrical components, the metallization layers comprising: a firstconductive line over the substrate; a first via over and electricallycoupled to the first conductive line; and a first conductive bump overand electrically coupled to the first via, wherein in a plan view, thefirst conductive bump has a first elongated shape, the first via has asecond elongated shape that is geometrically similar to the firstelongated shape.
 13. The semiconductor device of claim 12, wherein themetallization layers further comprises a second via below the firstconductive line and electrically coupled to the first conductive line,wherein the second via has a third shape, wherein the third shape andthe second elongated shape are not geometric similar shapes.
 14. Thesemiconductor device of claim 13, wherein a first area of the firstelongated shape is larger than a second area of the second elongatedshape, wherein the second area of the second elongated shape is largerthan a third area of the third shape.
 15. The semiconductor device ofclaim 12, wherein the metallization layers further comprises a secondconductive bump and a third conductive bump, wherein the firstconductive bump is configured to be coupled to a first polarity of apower supply, the second conductive bump is configured to be coupled toa second polarity of the power supply, and the third conductive bump isconfigured to be coupled to the first polarity of the power supply,wherein the second conductive bump is between the first conductive bumpand the third conductive bump.
 16. The semiconductor device of claim 15,wherein in the plan view, the first conductive bump and the thirdconductive bump are aligned such that first ends of the first conductivebump and second ends of the third conductive bump define a rectangulararea, and the second conductive bump is misaligned with the firstconductive bump such that at least one end of the second conductive bumpis outside the rectangular area.
 17. The semiconductor device of claim16, wherein in the plan view, the first conductive bump and the secondconductive bump have an offset along a longitudinal direction of thefirst conductive bump, wherein the offset is between about 5% and about50% of a length of the first conductive bump.
 18. A semiconductor devicecomprising: passive electrical components in a substrate; and aninterconnect structure over and electrically coupled to the passiveelectrical components, the interconnect structure comprising: aconductive bump over an uppermost dielectric layer of the interconnectstructure distal from the substrate; a first via under and electricallycoupled to the conductive bump; a conductive line under and electricallycoupled to the first via; and a second via under and electricallycoupled to the conductive line, wherein in a plan view, the conductivebump has a first shape, the first via has a second shape, and the secondvia has a third shape, wherein a first area of the first shape is largerthan a second area of the second shape, and the second area is largerthan a third area of the third shape.
 19. The semiconductor device ofclaim 18, wherein the first shape and the second shape are geometricallysimilar.
 20. The semiconductor device of claim 19, wherein the firstshape and the third shape are not geometrically similar.